10 Comments
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Ravulous's avatar

1 - Threshold voltage required to turn on the transistor

2 - Samsung

3 - Czochralski method (hope the spelling is right:)

4 - Arcing?

5 - Prometheus by Meta

6 - Ajinomoto (a crazy trivia, was shocked when I read it)

7 - LIDAR (because I don’t know anything else)

8 - No idea (should catch up on the posts)

9 - Indirect band gap

10 - Salicidation

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Vikram Sekar's avatar

Lots of correct answers!

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BOB JOE's avatar

1 channel length

2 Samsung?

3 not sure but words like bulk or purge are in my mind

4 arcing

5 Prometheus, meta

6 don’t recall name, but did they also invent msg?

7 LiDAR?

8 tip of my tongue but not sure

9 band gap

10 ion implantation?

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Vikram Sekar's avatar

Thanks for playing!

2, 4, 5 are correct.

6 -> they are known for msg yes.

9 -> yes, but what kind?

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BOB JOE's avatar

Curious what you would say is the answer for #1 my understanding is that the number of atoms between the source and sink impacts leakage between source and sink, and the number of atoms between the gate voltage and the channel -> gate dielectric thickness are important parameters which cannot get too small or quantum tunneling effects become significant

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Maxx Yung's avatar

Super cool format! I'll try my hand at this (currently a material science undergrad):

1. Not the correct answer but I'm pretty sure it has to do with increasing leakage current?

2. Samsung

3. Czochski process for growing silicon wafers

4. ?

5. Prometheus, Meta, Ohio, 1GW cluster

6. ?

7. ?

8. Optical assist features

9. Indirect band gap

10. Metal doping/coating? Not confident though.

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Vikram Sekar's avatar

Thanks for playing! 2 3 5 9 are correct β€” CZ process is easier to say for 3

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Maxx Yung's avatar

Dang, thought 1 & 8 was close!

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Vikram Sekar's avatar

Yes actually- close. 10 is pretty close but I’m looking for the technical term :)

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